Analytic Models of Synchronized Dual-Gate a-IGZO TFTs

The equations for the transfer characteristics and sub-threshold swing of dual-gate a-IGZO TFTs, when the top and bottom gate electrodes are connected (synchronized), are developed based on device physics. From these equations, it is found that synchronized DG aIGZO TFTs can be considered as conventional TFTs with modified gate capacitance and threshold voltage. The device parameters of coplanar homojunction DG TFTs are extracted using these equations.